Samsung Semiconductor - M393AAG40M32-CAE

KEY Part #: K7359910

[21143kpl varastossa]

Osa numero:: M393AAG40M32-CAE

Valmistaja:: Samsung Semiconductor

Yksityiskohtainen kuvaus:: DDR4 RDIMM 128 GB 4R x 4 3200 Mbps 1.2 V 288 (3DS 2H 8G x 4) x 36 Sample.

Valmistajan vakio läpimenoaika:: Varastossa

Kestoaika:: Yksi vuosi

Chip From:: Hongkong

RoHS:

Maksutapa:

Lähetyksen tapa:

Perheluokat:: KEY Components Co., LTD on elektronisten komponenttien jakelija, joka tarjoaa tuoteluokkia, mukaan lukien: DDR4, GDDR5, GDDR6, SLC Nand, DDR3, HBM Flarebolt, LPDDR5 and LPDDR3 ...

Kilpailuetu:: We specialize in Samsung Semiconductor M393AAG40M32-CAE electronic components. M393AAG40M32-CAE can be shipped within 24 hours after order. If you have any demands for M393AAG40M32-CAE, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

M393AAG40M32-CAE Tuoteominaisuudet

Osa numero : M393AAG40M32-CAE

Valmistaja : Samsung Semiconductor

Kuvaus : DDR4 RDIMM 128 GB 4R x 4 3200 Mbps 1.2 V 288 (3DS 2H 8G x 4) x 36 Sample

Sarja : DDR3

DDR : DDR4

dimm Tyyppi : RDIMM

Tiheys : 128 GB

Sijoitus x Org. : 4R x 4

Nopeus : 3200 Mbps

Jännite : 1.2 V

Nro Pin : 288

komponentti kokoonpano : (3DS 2H 8G x 4) x 36

tuotteen tila : Sample

Uusimmat uutiset

Evolving Mobile Solutions: Samsung at MWC 2018

Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones

Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM

NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters

Speed for the next generation of mobile devices

Inside the building blocks of the 5G future

How Will 5G Impact on Memory?

Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI

Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM

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